Deposition of WNxCy from the Tungsten Piperidylhydrazido Complex Cl4(CH3CN)W(N-pip) as a Single-Source Precursor
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چکیده
The tungsten piperidylhydrazido complex Cl4(CH3CN)W(N-pip) (1) was used as a single-source precursor for growth of tungsten carbonitride (WNxCy) by metal-organic chemical vapor deposition (CVD) in H2 carrier. Multiple spectroscopic techniques were used for preliminary evaluation of the suitability of 1 as a precursor and to suggest possible fragmentation pathways. The effect of growth temperature on film microstructure, lattice parameter, average grain size, chemical composition, chemical bonding states, growth rate, film resistivity, and sheet resistance was studied.
منابع مشابه
Chemical vapor deposition of WNxCy using the tungsten piperidylhydrazido complex Cl4„CH3CN...W„N-pip...: Deposition, characterization, and diffusion barrier evaluation
The tungsten piperidylhydrazido complex Cl4 CH3CN W N-pip 1 was used for film growth of tungsten carbonitride WNxCy by metal-organic chemical vapor deposition CVD in the absence and presence of ammonia NH3 in H2 carrier. The microstructure of films deposited with NH3 was x-ray amorphous between 300 and 450 °C. The chemical composition of films deposited with NH3 exhibited increased N levels and...
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